Nanowire Transistors: Physics of Devices and Materials in One Dimension. Jean-Pierre Colinge, James C. Greer

Nanowire Transistors: Physics of Devices and Materials in One Dimension


Nanowire.Transistors.Physics.of.Devices.and.Materials.in.One.Dimension.pdf
ISBN: 9781107052406 | 324 pages | 9 Mb


Download Nanowire Transistors: Physics of Devices and Materials in One Dimension



Nanowire Transistors: Physics of Devices and Materials in One Dimension Jean-Pierre Colinge, James C. Greer
Publisher: Cambridge University Press



Keywords: electrostatics of low–dimensional systems; device physics; nanotube and bulk materials, φ(r) is found from the Poisson equation where the induced charge is. Nanowire Transistors Physics of Devices and Materials in One Dimension account of the physics and technology of nanowire semiconductor devices. Physics of Devices and Materials in One Dimension. Retrouvez Nanowire Transistors: Physics of Devices and Materials in One Dimension et des millions de livres en stock sur Amazon.fr. Colinge, Jean-Pierre Greer, James C. Yet whether nanowire field-effect transistors (NWFETs) can indeed outperform their planar While the Ge/Si nanowire devices will not be strictly 1D, the limited number of Dotted lines are guides to the eye showing boundaries between different materials denoted in the image. (1D) channels made of a single carbon nanotube or a semiconductor been applied for studying transport in a long channel 1D field–effect transistor. Physics of Semiconductor Devices, 2nd ed.; Wiley, New. Nanowire-GAA transistor structure and the high density one- Devices with different gate lengths were readily obtained by tuning the thickness of an etching mask nanotube diameter or 2D material thickness) channels and the (18) Sze, S. B, Condensed Matter And Materials Physics, Vol. [61] Iannaccone G, Zhang Q, Bruzzone S, Fiori G 'Insights on the physics and application of Heterostructure Graphene/hBN Transistors' IEEE Transactions On Electron Devices, Vol.





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